amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 1 maap-000076-ped000 1. t b = mmic base temperature 2. adjust v gg between ?2.6 and ?1.5v to achieve specified idq. parameter symbol typical units bandwidth f 1.3-2.5 ghz output power p out 42 dbm 1-db compression point p1db 41 dbm small signal gain g 25 db input vswr vswr 1.3:1 gate c urrent i gg 33 ma drain current i dd 5.2 a output vswr vswr 1.6:1 2 nd harmonic 2f 25 dbc power added efficiency pae 29 % features ? 16 watt saturated output power level ? eutectically mounted to heat spreader ? next level integration is a silver epoxy-based process ? variable drain voltage (6-10v) operation ? msag? process description the maapgm0076-ped000 is a 2-stage 16 w power amplifier with on-chip bias net- works eutectically mounted on a 10-mil thick copper molybdenum (cumo) pedestal. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in high power applications. fabricated using m/a-com?s repeatable, high performance and highly reliable gaas multifunction self-aligned gate (msag?)process, each device is 100% rf tested at the die-on-pedestal assembly level to ensure performance compliance. m/a-com?s msag? process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital fets on a single chip, and polyimide scratch pro- tection for ease of use with automated manufacturing processes. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. electrical characteristics: t b = 45c 1 , z 0 = 50 , v dd = 10v, i dq = 3.8a 2 , p in = 24 dbm, r g = 30 primary applications ? radio communications ? satcom also available in: description ceramic package sample board (die) sample board (pkg) mechanical sample (die) part number maap- 000076-pkg001 m aap- 000076-smb004 m aap- 000076-smb001 m aap- 000076-mch000
amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 2 maap-000076-ped000 maximum ratings 3 operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -2.7 v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 10.0 v. 3. adjust v gg to set i dq , (approximately @ ?2.2 v). 4. set rf input. 5. power down sequence in reverse. turn v gg off last. characteristic symbol min typ max unit drain voltage v dd 8.0 10.0 10.0 v gate voltage v gg -2.6 -2.0 -1.2 v input power p in 24 27 dbm thermal resistance jc 2.6 c/w mmic base temperature t b note 5 c recommended operating conditions 4 parameter symbol absolute maximum units input power p in 29 dbm drain supply voltage v dd +12.0 v gate supply voltage v gg -3.0 v quiescent drain current (no rf) i dq 6.0 a junction temperature t j 170 c storage temperature t stg -55 to +150 c quiescent dc power dissipated (no rf) p diss 60 w 3. operation beyond these limits may result in permanent damage to the part. 4. operation outside of these ranges may reduce product reliability. 5. mmic base temperature = 170c ? jc * v dd * i d power derating curve, quiescent (no rf) 0 10 20 30 40 50 60 70 -40 -20 0 20 40 60 80 100 120 140 160 180 maximum allowable base temperature [c] peak power dissipation [watts]
amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 3 maap-000076-ped000 figure 3. saturated output power and drain voltage at 25% idss 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 1.0 1 .3 1.5 1 .8 2.0 2 .3 2.5 2.8 3.0 frequency (ghz) psat (dbm) 6v 8v 10v figure 6. output power, small signal gain, power added efficiency, and drain current vs. junction temperature at 10v, 2 ghz, and 25% idss 24 26 28 30 32 34 36 38 40 42 44 3 0 40 50 6 0 70 80 9 0 10 0 1 10 120 13 0 1 40 1 50 junction temperature (oc) output power (dbm), ssg(db), pae (%) 4.0 4.3 4.6 4.9 5.2 5.5 5.8 6.1 6.4 6.7 7.0 drain current (a) pout ssg pae ids all data is at 45oc mmic base temperature, cw stimulus, unless otherwise noted. figure 1. output power and power added efficiency at v d = 10v, p in = 24dbm, and 25% idss 20 23 26 29 32 35 38 41 44 47 50 1.00 1.25 1 .50 1 .7 5 2 .0 0 2.25 2.50 2.75 3.00 frequency (ghz) p out (dbm) 0 5 10 15 20 25 30 35 40 45 50 pae (%) pout pae figure 2. 1db compression point and drain voltage at 25% idss 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 1 .0 0 1.2 5 1 .50 1 .7 5 2.0 0 2 .25 2.5 0 2.75 3 .0 0 frequency (ghz) p 1db (dbm) 6v 8v 10v figure 4. saturated output power and temperature at 10v and 25% idss 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 1 .0 0 1 .2 5 1 .5 0 1 .7 5 2.00 2.25 2.50 2.75 3.00 fr eque nc y (g hz ) psat (dbm) -7oc 45 oc 98 oc figure 5. small signal gain and input and output vswr at 25% idss, v d = 10v 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 frequency (ghz) gain (db) 1 2 3 4 5 6 vswr gain input vswr output vswr
amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 4 maap-000076-ped000 figure 7. output power vs. input power and frequency at 10v and 25% idss 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 2 4 6 8 1012 141618 202224 26 input power (dbm) output power (dbm) 1.25 ghz 1.50 ghz 1.75 ghz 2.00 ghz 2.25 ghz 2.50 ghz figure 9. power added efficiency vs. input power and frequency at 10v and 25% idss 0 5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 1 2 14 1 6 1 8 20 2 2 24 26 input power (dbm) pae (%) 1.25 ghz 1.50 ghz 1.75 ghz 2.00 ghz 2.25 ghz 2.50 ghz figure 10. drain current vs. input power and frequency at 10v and 25% idss 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2 4 6 8 10 1 2 14 16 1 8 20 2 2 2 4 26 input power (dbm) drain current (a) 1.25 ghz 1.50 ghz 1.75 ghz 2.00 ghz 2.25 ghz 2.50 ghz figure 11. output power vs. input power and frequency at 8v and 25% idss 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 2 4 6 8 1012 141618 202224 26 input power (dbm) output power (dbm) 1.25 ghz 1.50 ghz 1.75 ghz 2.00 ghz 2.25 ghz 2.50 ghz figure 8. gain vs. output power and frequency at 10v and 25% idss 10 12 14 16 18 20 22 24 26 28 30 2 5 27 29 3 1 33 35 3 7 39 41 4 3 45 output power (dbm) gain (db) 1.5 ghz 2.0 ghz 2.5 ghz figure 12. gain vs. output power and frequency at 8v and 25% idss 10 12 14 16 18 20 22 24 26 28 30 25 27 2 9 31 33 3 5 37 39 41 4 3 45 output power (dbm) gain (db) 1.5 ghz 2.0 ghz 2.5 ghz all data is at 45oc mmic base temperature, cw stimulus, unless otherwise noted.
amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 5 maap-000076-ped000 figure 13. power added efficiency vs. input power and frequency at 8v and 25% idss 0 5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 1 2 14 1 6 1 8 20 2 2 24 26 input power (dbm) pae (%) 1.25 ghz 1.50 ghz 1.75 ghz 2.00 ghz 2.25 ghz 2.50 ghz figure 14. drain current vs. input power and frequency at 8v and 25% idss 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2 4 6 8 10 1 2 14 16 1 8 20 2 2 2 4 26 input power (dbm) drain current (a) 1.25 ghz 1.50 ghz 1.75 ghz 2.00 ghz 2.25 ghz 2.50 ghz figure 15. second harmonic vs. frequency and input power at 10v and 25% idss 0 10 20 30 40 50 60 70 80 90 100 1.00 1.25 1.50 1 .7 5 2 .0 0 2 .2 5 2 .5 0 2.75 3.00 frequency (ghz) 2 nd harmonic (dbc) 2 dbm 8 dbm 12 dbm 16 dbm 20 dbm 24 dbm figure 16. fixture used to characterize maapgm0076-die under cw stimulus. all data is at 45oc mmic base temperature, cw stimulus, unless otherwise noted.
amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 6 maap-000076-ped000 pad size ( m) rf in and out 200 x 250 dc drain supply voltage vd1 200 x 150 dc gate supply voltage vg2 100 x 100 size (mils) 8 x 10 4 x 8 4 x 4 dc gate supply voltage vg1 150 x 125 6 x 5 dc drain supply voltage vd2 500 x 200 20 x 8 pad no. 1 2 3 4 5 bond pad dimensions chip edge to bond pad dimensions are shown to the center of the bond pad. mechanical information chip size: 5.203 x 8.352 x 0.356 mm ( 205 x 329 x 14 mils) figure 17. die layout
amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 7 maap-000076-ped000 100- 200 pf 100- 200 pf 100- 200 pf 100- 200 pf rf in 100- 200 pf 100- 200 pf 100- 200 pf 100- 200 pf gnd 100 v dd vdd vgg gnd rf rf out v gg 0.01- 0.1 f gnd 0.01- 0.1 f drain crossover gate crossover in implementing the dc/ rf crossover shown, the following rules must applied. 1. the dc crossovers should approach and cross the rf trace at a 90 degree angle; 2. the printed dc traces that approach the rf line should be stopped 2 substrate heights from the rf line edge; 3. the rated current capability of the dc crossovers should be greater than the maximum current of the device; and 4. the wires or ribbons used to make the dc crossovers should clear the rf trace by ~ 1 substrate height. die handling: refer to application note an3016. all application notes may be accessed by going to http://www.macom.com/ application%20notes/index.htm. power supply sequencing: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. recommended layout and wire bonding configuration
amplifier, power, 16w 1.3-2.5 ghz m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev ? preliminary datasheet 8 maap-000076-ped000 next level assembly instructions: pedestal die attach: the following paragraphs detail recommendations and instructions for the integration of the die on pedestal (ic assembly) and mating substrates to the next level assembly. these recommendations are summa- rized pictorially in figure 18. to attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy. two epoxies are recommended for this purpose, diemat (www.diemat.com) pns dm6030hk and dm4030ld with bulk thermal conductivities of 60 and 15 w/m-oc, respectively. silver-filled epoxies with conductivities < 10 w/m-oc are not recommended for use in attaching these ic assemblies. dm6030hk is recommended for use when the coefficient of thermal expansion (cte) of the material to which the ic assembly is to be attached is similar to that of cumo (cte ~ 7ppm). a next level assembly attach material with a cte range of 4-10ppm would be acceptable. dm4030ld is recommended when the cte of the next level assembly mate- rial is significantly greater than cumo, e.g, copper and aluminum with ctes of 14 and 23 ppm, respectively. bondline thickness, the as-cured thickness of the silver epoxy layer between the ic assembly and next level assembly attach surface, is a critical parameter in terms of device performance and reliability. bondline thickness should be maintained between 1 and 1.5 mils. a bondline thickness of < 1 mil reduces the sheer strength of the mechanical at- tach. bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the ic and thereby the mttf. the pedestal thickness used in the ic assembly is set at 10 mils such that the final ic assembly thickness is ~ 14 mils making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through x-band. this surface planarity was an objective because it results in shorter rf bond wire lengths between the ic assembly rf i/o and the mating substrate transmission line. long bond wires can shift the load impedance required for ideal power transfer. shorter rf bond wires result in improved rf performance. in any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and ic assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or ic as- sembly peripheries. this variability, if not compensated for in the design of the overall assembly, can result in a high number of assembly failures due to epoxy wicking. this wicking process can occur when a mating substrate and ic assembly are placed too close to each other. to avoid this occurrence, a designed-in 5-10 mil spacing between the ic assembly and mating substrates is recommended. wirebonding: bond @ 160c using standard ball or thermal compression wedge bond techniques. for dc pad con- nections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shortest length, although ball bonds are also acceptable.
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